Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

National Taiwan University

Carnegie Mellon University

Wei-Che Hsieh

Chunyao Wang

Tze-Liang Lee

Hsin-Chang Lee

Ta-Cheng Lien

Ping-Hsun Lin

Hao-Ming Lien

Ming-Wei Chen

Hung-Yi Tsai

Hsin-Hao Yeh

Hao-Ping Cheng

Szu-Ping Tsai

Tai-Chun Huang

Yi-Hung Lin

Shiang-Rung Tsai

Ching Yu Huang

Brian Wang

Chao-Cheng Chen

Chun-Hung Lee

Yu Chao Lin

Chi-Lun Lu

Danith H Ly

Fu-Sheng Chu

Raman Bahal

Yi-Yung Chen

Allen Jong-Woei Whang

Shivaji A Thadke

Ali Nakhi

J Dinithi Perera

Ashif Y Shaikh

A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

EUV photo masks and manufacturing method thereof

A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.

A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

Forming low-stress silicon nitride layer through hydrogen treatment

Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a semiconductor element over a substrate, the semiconductor element including a channel region and a source/drain region, forming a dummy gate stack over the channel region of the semiconductor element, depositing a first spacer layer over sidewalls of the dummy gate stack, depositing a second spacer layer over the first spacer layer, wherein the second spacer layer includes at least one silicon sublayer and at least one nitrogen-containing sublayer, after the depositing of the second spacer layer, etching the source/drain region of the semiconductor element to form a source/drain recess, and after the etching, removing the second spacer layer.

Field-effect transistor device with gate spacer structure

Described herein are genetic recognition reagents comprising terminal aromatic moieties that bind specifically to a template nucleic acid and concatenate. Also provided are methods of using the genetic recognition reagents, e.g., to treat or diagnose a repeat expansion disorder, such as DMI.

Template-directed nucleic acid targeting compounds

An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

Injector for forming films respectively on a stack of wafers

In an embodiment, a method includes: patterning a plurality of mandrels over a mask layer; forming an etch coating layer on top surfaces of the mask layer and the mandrels; depositing a dielectric layer over the mask layer and the mandrels, a first thickness of the dielectric layer along sidewalls of the mandrels being greater than a second thickness of the dielectric layer along the etch coating layer; removing horizontal portions of the dielectric layer; and patterning the mask layer using remaining vertical portions of the dielectric layer as an etching mask.

Semiconductor device and method

An LED lamp includes a rectifier, a microcontroller, at least one group of LEDs, and at least one MOSFET device. The group of LEDs includes multiple lines of serially connected LEDs, which are connected in parallel to form a first end connected to a DC output of the rectifier and a second end connected to one or more serially connected current-limiting resistors which in turn are connected to a common ground. The gate terminal of the MOSFET device is connected to an output pin of the microcontroller. The drain terminal of the MOSFET device is connected to the second end of the group of LEDs. The source terminal of the MOSFET device is connected to the common ground. A voltage detection circuit is connected between the DC output of the rectifier and an input pin of the microcontroller for detecting the voltage at the DC output of the rectifier.

LED lamp

Growing community of inventors

Taipei, Taiwan

Wei-Che Hsieh