Wei Cao

This inventor holds 10 USPTO granted patents and 2 published patent applications. Top assignees: Applied Materials, Inc., Komag Corporation. Active years: 2002-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Cao. Retrieved from https://idiyas.com/inventor/wei-cao-rao3xn0o

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 (Patent Applications = 2)

% Patents Active = 70.0

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 1,107(Granted Patents)

Location History:

Milpitas, CA (US) (2002 - 2009)
Beacon, NY (US) (2011)

Company Filing History:

9 out of 14,482

Applied Materials, Inc.

Years Active: 2002-2011

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7867896 - Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor (2011-01-11),

2. 7576002 - Multi-step barrier deposition method (2009-08-18),

3. 7514358 - Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor (2009-04-07),

4. 6972267 - Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor (2005-12-06),

5. 6953742 - Tantalum barrier layer for copper metallization (2005-10-11),

6. 6811814 - Method for growing thin films by catalytic enhancement (2004-11-02),

7. 6730420 - Magnetic thin film recording media having extremely low noise and high thermal stability (2004-05-04),

8. 6660622 - Process for removing an underlying layer and depositing a barrier layer in one reactor (2003-12-09),

9. 6607976 - Copper interconnect barrier layer structure and formation method (2003-08-19),

10. 6498091 - Method of using a barrier sputter reactor to remove an underlying barrier layer (2002-12-24),

Title: Wei Cao: Pioneering Innovator in Technological Advancements

Introduction:

Wei Cao, a visionary inventor based in Milpitas, CA, has made significant contributions to technological progress through his passion for innovation and his relentless drive to solve complex problems. With a reputation as a forward-thinker in the field, Cao's work has been instrumental in shaping the landscape of modern technology.

Latest Patents:

Cao's latest patents showcase his expertise in cutting-edge technologies. One of his recent inventions involves the sequential deposition of tantalum nitride using an atomic layer deposition (ALD) process. This method enables the formation of tantalum nitride materials on substrates, paving the way for advanced applications in the semiconductor industry.

Another notable patent by Cao is the multi-step barrier deposition method. This innovative approach is used in forming barrier layers in via holes, enhancing the efficiency and reliability of semiconductor devices.

Career Highlights:

Cao's illustrious career has seen him work with renowned companies such as Applied Materials, Inc. and Komag Corporation. His tenure at these organizations has been marked by groundbreaking innovations and technological advancements that have significantly impacted the industry.

Collaborations:

Throughout his career, Cao has collaborated with esteemed professionals such as Ling Chen and Seshadri Ganguli. These collaborations have led to the development of cutting-edge technologies and solutions that have pushed the boundaries of innovation in the field.

Conclusion:

Wei Cao's remarkable journey as an inventor and innovator highlights his unwavering commitment to driving technological progress and solving complex challenges. His pioneering work in the semiconductor industry has cemented his legacy as a visionary inventor at the forefront of innovation.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: