The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Mar. 04, 2003
Wei Cao, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Vincent Ku, Palo Alto, CA (US);
Ling Chen, Sunnyvale, CA (US);
Wei Cao, Milpitas, CA (US);
Hua Chung, San Jose, CA (US);
Vincent Ku, Palo Alto, CA (US);
Ling Chen, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (BuN)Ta(NEt)(TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.