The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2004

Filed:

Jan. 16, 2002
Applicant:
Inventors:

Ling Chen, Sunnyvale, CA (US);

Wei Cao, Milpitas, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/618 ;
U.S. Cl.
CPC ...
C23C 1/618 ;
Abstract

A method of growing a thin film onto a substrate. A precursor of the film is fed into a reaction space in the form of a vapor phase pulse causing the precursor to adsorb onto the surface of the substrate to form a layer thereof. A catalyst is susequently fed into the reaction space in an amount to substantially convert the layer of the precursor to the desired thin film. The above steps may be repeated to achieve the desired film thickness.


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