Seongnam, South Korea

Wan Don Kim

This inventor holds 19 USPTO granted patents and 9 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wan Don Kim. Retrieved from https://idiyas.com/inventor/wan-don-kim-sc74mn6c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 13(Granted Patents)


Location History:

  • Seongnam-si, KR (2020 - 2024)
  • Hwaseong-si, KR (2024)

Company Filing History:


Years Active: 2020-2025

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Areas of Expertise:
Semiconductor Device
Digital-To-Analog Converter
Integrated Circuit
Current Steering
Analog Digital Converter
Graphene Film
Power Distribution
Work Function Adjusting
Fabrication Method
Capacitor DAC
In-Phase/Quadrature Imbalance
19 patents (USPTO):Explore Patents

Title: The Innovative Journey of Wan Kim

Introduction: Wan Kim is a pioneering inventor hailing from Hwaseong-si, South Korea. Her groundbreaking work in the field of technology has made her a prominent figure in the world of innovation.

Latest Patents: Wan Kim holds several patents in the realm of artificial intelligence and robotics, showcasing her dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Wan Kim has worked with some of the leading tech companies in South Korea, contributing significantly to the development of cutting-edge technologies.

Collaborations: Throughout her career, Wan Kim has collaborated with top researchers and engineers, fostering a culture of innovation and creativity in the projects she undertakes.

Conclusion: Wan Kim's passion for innovation and her relentless drive to create have solidified her position as a trailblazer in the world of technology, inspiring future generations of inventors to dream big and push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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