The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Aug. 10, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jun Ki Park, Hwaseong-si, KR;
Yoon Tae Hwang, Seoul, KR;
Wan Don Kim, Seongnam-si, KR;
Sung Hwan Kim, Hwaseong-si, KR;
Tae Yeol Kim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a gate structure including a gate electrode on a substrate. A source/drain pattern is on the substrate and positioned on a side surface of the gate electrode. A source/drain contact is on the source/drain pattern. A first conductive pad is on the source/drain contact. A second conductive pad is on the gate structure. A via plug penetrates the first conductive pad and is connected to the source/drain contact. A gate contact penetrates the second conductive pad and is connected to the gate electrode. A portion of the via plug protrudes from the first conductive pad. A portion of the gate contact protrudes from the second conductive pad. A height from an upper surface of the gate structure to an upper surface of the via plug is equal to a height from the upper surface of the gate structure to an upper surface of the gate contact.