Voon Cheng Ngwan

Title: Voon Cheng Ngwan: Innovator in Semiconductor Technology

Introduction

Voon Cheng Ngwan is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He holds a total of 4 patents, showcasing his innovative approach to electronic components.

Latest Patents

His latest patents include a method of making a charge coupled field effect rectifier diode. This invention involves a trench in a semiconductor substrate lined with a first insulation layer, where a hard mask layer is used to control the etching process. The design allows for the formation of a unitary gate/field plate conductor of a field effect rectifier diode through a single deposition of polysilicon material. Another significant patent is for a gate contact structure for a trench power MOSFET with a split gate configuration. This integrated circuit transistor device features a semiconductor substrate with a trench that extends through various doped regions, enhancing the performance of the device.

Career Highlights

Voon Cheng Ngwan has worked with prominent companies in the semiconductor industry, including STMicroelectronics GmbH and STMicroelectronics (Tours) SAS. His experience in these organizations has contributed to his expertise in developing advanced semiconductor technologies.

Collaborations

Throughout his career, Voon has collaborated with talented individuals such as Maurizio Gabriele Castorina and Ditto Adnan, who is a woman. These collaborations have likely enriched his work and led to innovative solutions in the field.

Conclusion

Voon Cheng Ngwan's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the development of electronic components and systems.