Stmicroelectronics Gmbh

Stmicroelectronics(tours) Sas

Stmicroelectronics S.r.l.

Voon Cheng Ngwan

Vincenzo Enea

Ditto Adnan

Maurizio Gabriele Castorina

Fadhillawati Tahir

Shin Phay Lee

Yean Ching Yong

Churn Weng Yim

A trench in a semiconductor substrate is lined with a first insulation layer. A hard mask layer deposited on the first insulation layer is used to control performance of an etch that selectively removes a first portion of the first insulating layer from an upper trench portion while leaving a second portion of first insulating layer in a lower trench portion. After removing the hard mask layer, an upper portion of the trench is lined with a second insulation layer. An opening in the trench that includes a lower open portion delimited by the second portion of first insulating layer in the lower trench portion and an upper open portion delimited by the second insulation layer at the upper trench portion, is then filled by a single deposition of polysilicon material forming a unitary gate/field plate conductor of a field effect rectifier diode.

Method of making a charge coupled field effect rectifier diode

An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.

Gate contact structure for a trench power MOSFET with a split gate configuration

A semiconductor substrate has a trench extending from a front surface and including a lower part and an upper part. A first insulation layer lines the lower part of the trench, and a first conductive material in the lower part is insulated from the semiconductor substrate by the first insulating layer to form a field plate electrode of a transistor. A second insulating layer lines sidewalls of the upper part of said trench. A third insulating layer lines a top surface of the first conductive material at a bottom of the upper part of the trench. A second conductive material fills the upper part of the trench. The second conductive material forms a gate electrode of the transistor that is insulated from the semiconductor substrate by the second insulating layer and further insulated from the first conductive material by the third insulating layer.

Split-gate trench power MOSFET with self-aligned poly-to-poly isolation

An integrated circuit includes a MOSFET device and a monolithic diode device, wherein the monolithic diode device is electrically connected in parallel with a body diode of the MOSFET device. The monolithic diode device is configured so that a forward voltage drop Vfof the monolithic diode device is less than a forward voltage drop Vfof the body diode of the MOSFET device. The forward voltage drop Vfis process tunable by controlling a gate oxide thickness, a channel length and body doping concentration level. The tunability of the forward voltage drop Vfadvantageously permits design of the integrated circuit to suit a wide range of applications according to requirements of switching speed and efficiency.

Growing community of inventors

Singapore, Singapore

Voon Cheng Ngwan