The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Mar. 30, 2021
Stmicroelectronics Pte Ltd, Singapore, SG;
Shin Phay Lee, Singapore, SG;
Voon Cheng Ngwan, Singapore, SG;
Maurizio Gabriele Castorina, Singapore, SG;
STMicroelectronics Pte Ltd, Singapore, SG;
Abstract
An integrated circuit includes a MOSFET device and a monolithic diode device, wherein the monolithic diode device is electrically connected in parallel with a body diode of the MOSFET device. The monolithic diode device is configured so that a forward voltage drop Vfof the monolithic diode device is less than a forward voltage drop Vfof the body diode of the MOSFET device. The forward voltage drop Vfis process tunable by controlling a gate oxide thickness, a channel length and body doping concentration level. The tunability of the forward voltage drop Vfadvantageously permits design of the integrated circuit to suit a wide range of applications according to requirements of switching speed and efficiency.