Vivek Thirtha

Title: Innovations of Vivek Thirtha

Introduction

Vivek Thirtha is an accomplished inventor based in Portland, Oregon. He has made significant contributions to the field of integrated circuit technology, holding three patents that showcase his innovative approach to semiconductor design.

Latest Patents

His latest patents include "Lateral confinement of source drain epitaxial growth in non-planar transistor for cell height scaling" and "Gate-all-around integrated circuit structures having nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxy." The first patent describes an integrated circuit structure that features a plurality of horizontal nanowires positioned above a sub-fin. A gate stack is situated over these nanowires and the sub-fin, with epitaxial source or drain structures located at opposite ends. The epitaxial growth is confined within a mold, which limits the lateral wingspan and results in vertical opposing sidewalls with a mushroom-shaped top surface over a dielectric layer. The second patent focuses on gate-all-around integrated circuit structures that utilize fin stack isolation, detailing methods for fabricating these structures. This includes a sub-fin structure on a substrate, with an isolation structure made of a first dielectric material surrounding regions of a second dielectric material.

Career Highlights

Vivek Thirtha is currently employed at Intel Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing integrated circuit designs that enhance performance and efficiency.

Collaborations

He collaborates with talented colleagues, including Nitesh Kumar and Tahir Ghani, who contribute to the innovative projects at Intel Corporation.

Conclusion

Vivek Thirtha's contributions to the field of integrated circuits exemplify the spirit of innovation. His patents reflect a deep understanding of semiconductor technology and a commitment to advancing the industry.