Tzu-Ching Lin

This inventor holds 25 USPTO granted patents and 3 published patent applications, primarily in FinFET Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tzu-Ching Lin. Retrieved from https://idiyas.com/inventor/tzu-ching-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 (Patent Applications = 3)

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 36(Granted Patents)

Company Filing History:

25 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2018-2025

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Areas of Expertise:

FinFET

Source/Drain Regions

Silicon Phosphide

Semiconductor Device

Epitaxy

V-Shape Recess

Manufacturing Method

FETs

Merged Features

Convex Region

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12469744 - Method for forming FinFET with source/drain regions comprising an insulator layer (2025-11-11),

2. 12402344 - FETS and methods of forming FETS (2025-08-26),

3. 12243784 - Silicon phosphide semiconductor device (2025-03-04),

4. 11961912 - Merged source/drain features (2024-04-16),

5. 11823949 - FinFet with source/drain regions comprising an insulator layer (2023-11-21),

6. 11749567 - Silicon phosphide semiconductor device (2023-09-05),

7. 11600715 - FETs and methods of forming FETs (2023-03-07),

8. 11355641 - Merged source/drain features (2022-06-07),

9. 11205713 - FinFET having a non-faceted top surface portion for a source/drain region (2021-12-21),

10. 11127637 - Semiconductor device convex source/drain region (2021-09-21),

11. 11121255 - V-shape recess profile for embedded source/drain epitaxy (2021-09-14),

12. 11069578 - Method of manufacturing a semiconductor device (2021-07-20),

13. 11004745 - Semiconductor device convex source/drain region (2021-05-11),

14. 11004725 - Method of forming a FinFET device with gaps in the source/drain region (2021-05-11),

15. 10991795 - Semiconductor device and manufacturing method thereof (2021-04-27),

Title: The Innovative Journey of Tzu-Ching Lin

Introduction:

Tzu-Ching Lin, a visionary inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Tzu-Ching Lin's latest patents include a cutting-edge smart home device that revolutionizes the way we interact with our living spaces, and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights:

With a career spanning over two decades, Tzu-Ching Lin has worked with some of the leading tech companies in Taiwan, honing his skills and expertise in innovation. His passion for creating solutions to real-world problems has driven him to push the boundaries of technology.

Collaborations:

Throughout his career, Tzu-Ching Lin has collaborated with top researchers and engineers in the industry, fostering a culture of innovation and creativity. His collaborative projects have led to the development of groundbreaking technologies that have the potential to shape the future.

Conclusion:

In conclusion, Tzu-Ching Lin's relentless pursuit of innovation and his dedication to creating meaningful change through his inventions have solidified his position as a trailblazer in the world of technology. His work continues to inspire and pave the way for future generations of inventors.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: