The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2024

Filed:

Jun. 06, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-An Lin, Tainan, TW;

Wei-Yuan Lu, Taipei, TW;

Feng-Cheng Yang, Hsinchu County, TW;

Tzu-Ching Lin, Hsinchu, TW;

Li-Li Su, HsinChu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); A61B 5/15 (2006.01); G01N 1/14 (2006.01); G01N 33/49 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); A61B 5/150099 (2013.01); A61B 5/150992 (2013.01); G01N 1/14 (2013.01); G01N 33/4915 (2013.01); H01L 21/02532 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01); H01L 29/045 (2013.01); H01L 29/7853 (2013.01);
Abstract

The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.


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