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For the Inventor, By the Inventor

Tainan, Taiwan

Chun-An Lin

This inventor holds 15 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chun-An Lin. Retrieved from https://idiyas.com/inventor/chun-an-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 21(Granted Patents)


Company Filing History:

goldMedal15 out of 43,553 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Source/Drain Features
Epitaxial Structures
Semiconductor Device
Manufacturing Method
Proximity Profile
Horizontal Gate
Device Structure
Fabrication Techniques
Strained Features
15 patents (USPTO):Explore Patents
1. 12317548 - Optimized proximity profile for strained source/drain feature and method of fabricating thereof (2025-05-27),
2. 12125879 - Epitaxial source/drain structure and method (2024-10-22),
3. 12002854 - Semiconductor device and method of manufacture (2024-06-04),
4. 11961912 - Merged source/drain features (2024-04-16),
5. 11824102 - Optimized proximity profile for strained source/drain feature and method of fabricating thereof (2023-11-21),
6. 11784222 - Epitaxial source/drain structure and method (2023-10-10),
7. 11489062 - Optimized proximity profile for strained source/drain feature and method of fabricating thereof (2022-11-01),
8. 11355641 - Merged source/drain features (2022-06-07),
9. 11222951 - Epitaxial source/drain structure and method (2022-01-11),
10. 11171209 - Semiconductor device and method of manufacture (2021-11-09),
11. 10950730 - Merged source/drain features (2021-03-16),
12. 10535525 - Method for forming semiconductor device structure (2020-01-14),
13. 10276693 - Semiconductor device and manufacturing method thereof (2019-04-30),
14. 9786757 - Method of forming horizontal gate all around structure (2017-10-10),
15. 9312186 - Method of forming horizontal gate all around structure (2016-04-12),

Title: The Innovative Journey of Chun-An Lin

Introduction: Chun-An Lin, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Chun-An Lin's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar panel efficiency and energy storage solutions.

Career Highlights: With a career spanning over two decades, Chun-An Lin has established himself as a leading figure in the tech industry. His work has been instrumental in shaping the future of sustainable energy and smart technologies.

Collaborations: Throughout his career, Chun-An Lin has collaborated with top research institutions and leading tech companies to bring his innovative ideas to life. His partnerships have led to the successful commercialization of several cutting-edge technologies.

Conclusion: Chun-An Lin's relentless pursuit of innovation and commitment to creating a more sustainable future have solidified his reputation as a visionary inventor in the tech world. His contributions continue to inspire the next generation of inventors and pave the way for a brighter tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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