The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Oct. 31, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-An Lin, Tainan, TW;

Chun-Hsiung Lin, Hsinchu County, TW;

Chia-Ta Yu, New Taipei, TW;

Sai-Hooi Yeong, Hsinchu County, TW;

Ching-Fang Huang, Taipei, TW;

Wen-Hsing Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/1033 (2013.01); H01L 29/1083 (2013.01); H01L 29/7851 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01);
Abstract

A semiconductor device includes a substrate, a bottom semiconductor fin, at least one sidewall structure, a top semiconductor fin, and a gate structure. The bottom semiconductor fin is disposed on the substrate. The sidewall structure protrudes from the semiconductor fin. The top semiconductor fin is disposed on the bottom semiconductor fin. The top semiconductor fin includes a channel portion and at least one source/drain portion. The source/drain portion is disposed between the channel portion and the sidewall structure. The gate structure covers the channel portion of the top semiconductor fin.


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