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For the Inventor, By the Inventor

Hsinchu County, Taiwan

Chun-Hsiung Lin

USPTO Granted Patents = 104 

Average Co-Inventor Count = 4.4

ph-index = 7

Forward Citations = 1,073(Granted Patents)

DiyaCoin DiyaCoin = 2.19 


Inventors with similar research interests:


Location History:

  • Hsin-Chu, TW (2017 - 2022)
  • Hsinchu County, TW (2015 - 2024)
  • Zhubei, TW (2015 - 2024)

Company Filing History:

goldMedal103 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 10 
 
Parabellum Strategic Opportunities Fund LLC
 patents

Years Active: 2015-2025

where 'Filed Patents' based on already Granted Patents

104 patents (USPTO):
1. 12439638 - FET with wrap-around silicide and fabrication methods thereof (2025-10-07),
2. 12382655 - Transistors having vertical nanostructures (2025-08-05),
3. 12363980 - Spacer structure for semiconductor device (2025-07-15),
4. 12360153 - In-line device electrical property estimating method and test structure of the same (2025-07-15),
5. 12336261 - Contacts for highly scaled transistors (2025-06-17),
6. 12218226 - Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process (2025-02-04),
7. 12218210 - Semiconductor device (2025-02-04),
8. 12198986 - Dual channel gate all around transistor device and fabrication methods thereof (2025-01-14),
9. 12148836 - Gate-all-around structure and methods of forming the same (2024-11-19),
10. 12148673 - FinFET devices and methods of forming the same (2024-11-19),
11. 12125897 - Air spacers in transistors and methods forming same (2024-10-22),
12. 12119404 - Gate all around structure with additional silicon layer and method for forming the same (2024-10-15),
13. 12119270 - Hybrid source drain regions formed based on same fin and methods forming same (2024-10-15),
14. 12087841 - Method of manufacturing gate spacers with stepped sidewalls by removing vertical portions of a helmet layer (2024-09-10),
15. 12009216 - Methods of forming silicide contact in field-effect transistors (2024-06-11),

Title: The Innovative Journey of Inventor Chun-Hsiung Lin

Introduction: Chun-Hsiung Lin, a talented inventor hailing from Hsinchu County, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Chun-Hsiung Lin holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials. His most recent patents focus on enhancing the efficiency of solar cells and improving the performance of electronic devices.

Career Highlights: With a background in engineering and a passion for innovation, Chun-Hsiung Lin has had a remarkable career marked by numerous achievements. He has worked for leading tech companies and research institutions, where he has spearheaded projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout his career, Chun-Hsiung Lin has collaborated with top researchers, engineers, and scientists from around the world. His collaborative efforts have resulted in the development of cutting-edge technologies that have revolutionized various industries.

Conclusion: Chun-Hsiung Lin's relentless pursuit of innovation and his dedication to pushing the limits of technology have established him as a prominent figure in the world of inventors. His work continues to inspire future generations of innovators to think outside the box and create solutions that shape the world we live in.

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