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Hsinchu County, Taiwan

Chun-Hsiung Lin

USPTO Granted Patents = 104 (Patent Applications = 6)

Average Co-Inventor Count = 4.4

ph-index = 7

Forward Citations = 1,085(Granted Patents)

Forward Citations (Not Self Cited) = 1,042(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsin-Chu, TW (2017 - 2022)
Hsinchu County, TW (2015 - 2024)
Zhubei, TW (2015 - 2024)

Company Filing History:

103 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Parabellum Strategic Opportunities Fund LLC

Years Active: 2015-2025

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Areas of Expertise:

Finfet Devices

Gate-All-Around Transistors

Silicide Contacts

Vertical Nanostructures

Air-Gap Spacers

Hybrid Nanostructures

Stepped Gate Spacer

Semiconductor Fabrication

Electrical Property Estimation

Spacer Structures

Core-Shell Structures

Transistor Manufacturing

104 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12439638 - FET with wrap-around silicide and fabrication methods thereof (2025-10-07),

2. 12382655 - Transistors having vertical nanostructures (2025-08-05),

3. 12363980 - Spacer structure for semiconductor device (2025-07-15),

4. 12360153 - In-line device electrical property estimating method and test structure of the same (2025-07-15),

5. 12336261 - Contacts for highly scaled transistors (2025-06-17),

6. 12218226 - Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process (2025-02-04),

7. 12218210 - Semiconductor device (2025-02-04),

8. 12198986 - Dual channel gate all around transistor device and fabrication methods thereof (2025-01-14),

9. 12148836 - Gate-all-around structure and methods of forming the same (2024-11-19),

10. 12148673 - FinFET devices and methods of forming the same (2024-11-19),

11. 12125897 - Air spacers in transistors and methods forming same (2024-10-22),

12. 12119404 - Gate all around structure with additional silicon layer and method for forming the same (2024-10-15),

13. 12119270 - Hybrid source drain regions formed based on same fin and methods forming same (2024-10-15),

14. 12087841 - Method of manufacturing gate spacers with stepped sidewalls by removing vertical portions of a helmet layer (2024-09-10),

15. 12009216 - Methods of forming silicide contact in field-effect transistors (2024-06-11),

Title: The Innovative Journey of Inventor Chun-Hsiung Lin

Introduction: Chun-Hsiung Lin, a talented inventor hailing from Hsinchu County, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Chun-Hsiung Lin holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials. His most recent patents focus on enhancing the efficiency of solar cells and improving the performance of electronic devices.

Career Highlights: With a background in engineering and a passion for innovation, Chun-Hsiung Lin has had a remarkable career marked by numerous achievements. He has worked for leading tech companies and research institutions, where he has spearheaded projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout his career, Chun-Hsiung Lin has collaborated with top researchers, engineers, and scientists from around the world. His collaborative efforts have resulted in the development of cutting-edge technologies that have revolutionized various industries.

Conclusion: Chun-Hsiung Lin's relentless pursuit of innovation and his dedication to pushing the limits of technology have established him as a prominent figure in the world of inventors. His work continues to inspire future generations of innovators to think outside the box and create solutions that shape the world we live in.

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