The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jun. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a semiconductor fin over a substrate; forming a gate structure over the semiconductor fin; forming a helmet layer lining the gate structure and the semiconductor fin; etching the helmet layer to remove portions of the helmet layer from opposite sidewalls of the gate structure, wherein the remaining helmet layer comprises a first remaining portion on a top surface of the gate structure and a second remaining portion on a top surface of the semiconductor fin; forming a spacer layer covering the gate structure, wherein the spacer layer is in contact with the first remaining portion and the second remaining portion of the remaining helmet layer; etching the spacer layer and the remaining helmet layer to form gate spacers, wherein each of the gate spacers has a stepped sidewall; and forming source/drain epitaxy structures on opposite sides of the gate structure.