The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Aug. 31, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-An Lin, Tainan, TW;
Chun-Hsiung Lin, Zhubei, TW;
Kai-Hsuan Lee, Hsinchu, TW;
Sai-Hooi Yeong, Zhubei, TW;
Cheng-Yu Yang, Xihu Township, Changhua County, TW;
Yen-Ting Chen, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate, a gate structure, a first doped structure, a second doped structure, and a dielectric layer. The method includes forming a through hole in the dielectric layer. The method includes performing a physical vapor deposition process to deposit a first metal layer over the first doped structure exposed by the through hole. The method includes reacting the first metal layer with the first doped structure to form a metal semiconductor compound layer between the first metal layer and the first doped structure. The method includes removing the first metal layer. The method includes performing a chemical vapor deposition process to deposit a second metal layer in the through hole. The method includes forming a conductive structure in the through hole and over the second metal layer.