The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Jul. 19, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tzu-Ching Lin, Hsinchu, TW;
Tuoh Bin Ng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Abstract
A method for forming source/drain regions in a semiconductor device and a semiconductor device including source/drain regions formed by the method are disclosed. In an embodiment, a method includes etching a semiconductor fin to form a first recess, the semiconductor fin defining sidewalls and a bottom surface of the first recess, the semiconductor fin extending in a first direction; forming a source/drain region in the first recess, the source/drain region including a single continuous material extending from a bottom surface of the first recess to above a top surface of the semiconductor fin, a precursor gas for forming the source/drain region including phosphine (PH) and at least one of arsine (AsH) or monomethylsilane (CHSi); and forming a gate over the semiconductor fin adjacent the source/drain region, the gate extending in a second direction perpendicular the first direction.