Company Filing History:
Years Active: 2018-2025
Title: Tuoh Bin Ng: Innovator in Semiconductor Technology
Introduction
Tuoh Bin Ng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on advanced methods for forming semiconductor devices, particularly in the area of FinFET technology.
Latest Patents
Among his latest patents is a method for forming FinFET with source/drain regions comprising an insulator layer. This invention includes a device featuring a first fin extending from a substrate, a first gate stack over and along the sidewalls of the first fin, and a first source/drain region that incorporates an insulator layer. Another notable patent is for a silicon phosphide semiconductor device, which details a method for forming source/drain regions in a semiconductor device. This method involves etching a semiconductor fin to create a recess and forming a source/drain region that includes a continuous material extending from the recess to above the semiconductor fin.
Career Highlights
Tuoh Bin Ng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced semiconductor technologies.
Collaborations
He has collaborated with notable coworkers, including Tzu-Ching Lin and Cheng-Wen Cheng, contributing to various projects that enhance semiconductor manufacturing processes.
Conclusion
Tuoh Bin Ng's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of semiconductor devices.