Kiyosu, Japan

Tsutomu Ina

USPTO Granted Patents = 6 

Average Co-Inventor Count = 2.5

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2024

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6 patents (USPTO):Explore Patents

Title: Tsutomu Ina: Innovator in Semiconductor Technology

Introduction

Tsutomu Ina is a prominent inventor based in Kiyosu, Japan, known for his significant contributions to semiconductor technology. With a total of 6 patents to his name, he has made remarkable advancements in the field, particularly in enhancing the performance of semiconductor devices.

Latest Patents

Among his latest innovations, Tsutomu Ina has developed a semiconductor device that effectively reduces the contact resistance of the body electrode without compromising channel mobility. This device features a p-type layer that is a magnesium-doped p-GaN layer, structured in a two-layer format. The second p-type layer has a higher magnesium concentration than the first, which is crucial for its functionality. Additionally, he has created a power converter that includes a substrate and multiple semiconductor layers, designed to minimize on resistance while maintaining breakdown voltage.

Career Highlights

Tsutomu Ina is currently associated with Toyoda Gosei Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that enhance efficiency and performance in various applications.

Collaborations

He has collaborated with notable colleagues such as Tohru Oka and Junichiro Kurosaki, contributing to a dynamic research environment that fosters innovation.

Conclusion

Tsutomu Ina's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. His patents reflect a commitment to advancing the field and improving device performance.

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