The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
May. 25, 2016
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Tsutomu Ina, Kiyosu, JP;
Tohru Oka, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
There is provided a semiconductor device comprising a substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a trench and an insulating film arranged to cover a surface of the trench. The first semiconductor layer has a carrier concentration that provides a peak in a thickness direction perpendicular to a plane direction. A high carrier concentration area having a peak of the carrier concentration in the first semiconductor layer is extended in the plane direction at a location away from the trench to be located on the substrate side of the trench. This configuration reduces the on resistance while suppressing reduction of the breakdown voltage in the semiconductor device.