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For the Inventor, By the Inventor

Atsugi, Japan

Toshio Fujii

This inventor holds 10 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1989-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshio Fujii. Retrieved from https://idiyas.com/inventor/toshio-fujii-35jolzt2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 10

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 7

Forward Citations = 152(Granted Patents)


Location History:

  • Kanagawa, JP (1989)
  • Atsugi, JP (1989 - 1995)
  • Kawasaki, JP (2003 - 2009)

Company Filing History:

goldMedal10 out of 39,381 
 
Fujitsu Corporation
 patents

Years Active: 1989-2009

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10 patents (USPTO):Explore Patents
1. 7473922 - Infrared detector (2009-01-06),
2. 6504222 - Multi-quantum well infrared photo-detector (2003-01-07),
3. 5476811 - Method of growing epitaxial layers (1995-12-19),
4. 5284783 - Method of fabricating a heterojunction bipolar transistor (1994-02-08),
5. 5160993 - High speed optosemiconductor device having multiple quantum wells (1992-11-03),
6. 5021863 - Semiconductor quantum effect device having negative differential (1991-06-04),
7. 4889831 - Method of forming a high temperature stable ohmic contact to a III-V (1989-12-26),
8. 4833101 - Method of growing quaternary or pentanary alloy semiconductor (1989-05-23),
9. 4825264 - Resonant tunneling semiconductor device (1989-04-25),
10. 4799088 - High electron mobility single heterojunction semiconductor devices and (1989-01-17),

Title: The Innovations of Toshio Fujii

Introduction

Toshio Fujii is a prominent inventor based in Atsugi, Japan. He has made significant contributions to the field of infrared detection technology. With a total of 10 patents to his name, Fujii's work has advanced the capabilities of infrared photo-detectors.

Latest Patents

Fujii's latest patents include an innovative infrared detector that features at least one or more dark current reducing layers with a quantum well structure. This design is implemented at an end portion in the stacking direction of an infrared detecting section where quantum dot layers are stacked. Another notable patent is the multi-quantum well infrared photo-detector. This device incorporates multiple multi-quantum well layers, each with distinct sensitivities for different wavelength ranges of infrared light. The design includes a switch connected to a common contact layer and a current integration unit, allowing for efficient charge and discharge based on the applied voltages.

Career Highlights

Toshio Fujii is currently employed at Fujitsu Corporation, where he continues to innovate in the field of infrared technology. His work has not only contributed to the company's advancements but has also positioned him as a key figure in the industry.

Collaborations

Fujii has collaborated with notable coworkers such as Shunichi Muto and Hideaki Ishikawa. Their combined expertise has fostered a productive environment for innovation and development.

Conclusion

Toshio Fujii's contributions to infrared detection technology exemplify the impact of dedicated inventors in advancing modern technology. His patents reflect a commitment to innovation that continues to shape the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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