The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1989
Filed:
Nov. 30, 1987
Applicant:
Inventors:
Kazuaki Ishii, Atsugi, JP;
Toshiro Futatsugi, Isehara, JP;
Toshio Oshima, Atsugi, JP;
Toshio Fujii, Atsugi, JP;
Naoki Yokoyama, Atsugi, JP;
Akihiro Shibatomi, Machida, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437184 ; 437 41 ; 437192 ; 437133 ; 437 31 ; 357 22 ; 357 16 ; 357 30 ; 148D / ; 148D / ;
Abstract
An electrode structure of an electrode of a refractory metal or a silicide thereof on a layer of In.sub.x Ga.sub.1-x As (0<x<1) on a substrate of a III-V compound semiconductor is ohmic and is stable even at a high temperature, for example, 900.degree. C. This high temperature stable ohmic electrode structure allows ion implantation into the substrate with the electrode as a mask followed by annealing to form a doped region in alignment with the edge of the electrode.