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For the Inventor, By the Inventor

Atsugi, Japan

Naoki Yokoyama

This inventor holds 26 USPTO granted patents, plus 2 CIPO patents, primarily in Semiconductor Technology. Top assignees: Fujitsu Corporation, Japan Radio Co., Ltd.. Active years: 1986-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoki Yokoyama. Retrieved from https://idiyas.com/inventor/naoki-yokoyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 96.2

 

Average Co-Inventor Count = 1.8

ph-index = 14

Forward Citations = 463(Granted Patents)


Location History:

  • Atsugi, JP (1986 - 1995)
  • Yokohama, JP (1986 - 1996)
  • Kawasaki, JP (1994 - 1999)
  • Mitaka, JP (2003)
  • Machida, JP (2016)

Company Filing History:

goldMedal25 out of 39,371 
 
Fujitsu Corporation
 patents
silverMedal1 out of 90 
 
Japan Radio Co., Ltd.
 patents

Years Active: 1986-2016

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Areas of Expertise:
Semiconductor Manufacturing
Optical Device
Resonant-Tunneling
High-Speed Device
Quantum Effect
Heterojunction Bipolar Transistor
Schottky Gate
Integrated Circuit
Negative Differential Resistance
Thin Film Resistor
Ternary Logic Circuit
Functional Element
26 patents (USPTO):Explore Patents
1. 9355916 - Semiconductor manufacturing method and semiconductor device (2016-05-31),
2. 6522301 - Above deck unit for automatic identification system (2003-02-18),
3. 5889296 - Semiconductor optical device and an optical processing system that uses (1999-03-30),
4. 5677551 - Semiconductor optical device and an optical processing system that uses (1997-10-14),
5. 5536967 - Semiconductor device including Schottky gate of silicide and method for (1996-07-16),
6. 5389804 - Resonant-tunneling heterojunction bipolar transistor device (1995-02-14),
7. 5311465 - Semiconductor memory device that uses a negative differential resistance (1994-05-10),
8. 5214297 - High-speed semiconductor device (1993-05-25),
9. 5200349 - Semiconductor device including schotky gate of silicide and method for (1993-04-06),
10. 5151618 - Resonant-tunneling heterojunction bipolar transistor device (1992-09-29),
11. 5130766 - Quantum interference type semiconductor device (1992-07-14),
12. 5031005 - Semiconductor device (1991-07-09),
13. 5027179 - Resonant-tunneling heterojunction bipolar transistor device (1991-06-25),
14. 5021863 - Semiconductor quantum effect device having negative differential (1991-06-04),
15. 5003360 - Semiconductor functional element (1991-03-26),

Title: Naoki Yokoyama - Innovative Inventor from Atsugi

Introduction: Naoki Yokoyama is a renowned inventor hailing from Atsugi, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Naoki Yokoyama holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his diverse expertise and innovative mindset.

Career Highlights: With over two decades of experience in the industry, Naoki Yokoyama has worked with leading research institutions and tech companies, spearheading projects that have revolutionized the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Naoki Yokoyama has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Naoki Yokoyama's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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