The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 1991
Filed:
Oct. 21, 1987
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 12 ; 357 16 ; 357 17 ; 357 34 ;
Abstract
A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of .vertline.Ec.sub.3 -Ec.sub.1 .vertline..apprxeq..vertline.Ev.sub.3 -Ev.sub.5 .vertline., where Ec.sub.3 is a resonant energy level of electrons in a conduction band of the third layer and Ev.sub.3 is a resonant energy level of holes in a valence band thereof, and Ec.sub.1 is an energy level of a conduction band of the first layer and Ev.sub.5 is an energy level of a valence band of the fifth layer.