logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9355916 B1

PDFFull Text
Expired
Date of Patent:
May. 31, 2016

Filed:

Mar. 25, 2015

Semiconductor manufacturing method and semiconductor device

Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Daiyu Kondo, Atsugi, JP;

Shintaro Sato, Atsugi, JP;

Naoki Yokoyama, Machida, JP;

Motonobu Sato, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 31/11 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/44 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 29/201 (2006.01); H01L 21/285 (2006.01); H01L 21/84 (2006.01); H01L 23/522 (2006.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823871 (2013.01); H01L 21/28525 (2013.01); H01L 21/28575 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/84 (2013.01); H01L 23/5226 (2013.01); H01L 23/53276 (2013.01); H01L 27/0922 (2013.01); H01L 27/1203 (2013.01); H01L 27/124 (2013.01); H01L 27/1259 (2013.01); H01L 29/16 (2013.01); H01L 29/201 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 21/8258 (2013.01);
Abstract

A method manufactures a semiconductor device which allows nanocarbon materials, such as high-quality graphene and carbon nanotube to be used. The method of manufacturing the semiconductor device comprises forming on a substrate a wiring structure including wires of nanocarbon material; forming on the wiring structure an element structure including a semiconductor element; and interconnecting the wires of the wiring structure and the semiconductor element of the element structure.

Find Patent Forward Citations

Quick Actions:

Kondo, Daiyu. (2016). Semiconductor manufacturing method and semiconductor device (U.S. Patent No. 9355916). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9355916

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…