The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1992
Filed:
Aug. 03, 1989
Hiroshi Arimoto, Yokohama, JP;
Shunichi Muto, Atsugi, JP;
Shigehiko Sasa, Isehara, JP;
Makoto Okada, Isehara, JP;
Naoki Yokoyama, Atsugi, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A quantum interference type semiconductor device is composed of at least one bifurcated branch conductive channel with a heterojunction in a semiconductor with a band discontinuity that produced a potential well between two semiconductor regions into which a carrier is injected and from which a carrier is drained, at least one gate electrode is arranged at the side of the one bifurcated branch conduction channel, and a kind of filter using a resonance tunneling barrier arranged before or upstream of the semiconductor region into which a carrier is injected. The filter passes a carrier having a certain energy legvel to the channel whereby the level of the carrier traveling in the channel becomes equal to realize a good quantum interference effect.