The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1996
Filed:
Oct. 07, 1994
Applicant:
Inventor:
Naoki Yokoyama, Yokohama, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257485 ; 257472 ; 257473 ;
Abstract
A Schottky gate electrode of a refractory metal silicide is formed on a compound semiconductor, by which the barrier height is maintained satisfactorily even after heat treatment above 800.degree. C. Accordingly, it is possible to form an impurity diffused region using the Schottky gate electrode as a mask and then to effect the recrystallization of the semiconductor or the activation of the impurity by heat treatment, so that source and drain regions can be positioned by self-alignment relative to the gate electrode.