The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1989
Filed:
Aug. 04, 1987
Fujitsu Limited, Kawasaki, JP;
Abstract
A resonant tunneling semiconductor device having a large peak-to-valley current density J.sub.p /J.sub.v ratio comprises an InP substrate, a first contact compound semiconductor lattice-matched to Inp, a first barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z (In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), a well layer of In.sub.1-y Ga.sub.y As, (0.48.gtoreq.y.gtoreq.0.46), a second barrier layer of (In.sub.0.52 Al.sub.0.48 As).sub.z -(In.sub.0.53 Ga.sub.0.47 As).sub.1-z, (0<z.ltoreq.1), and a second contact layer compound semiconductor lattice-matched to InP:The first and second barrier layers and the well layer forming a quantum-well structure. Instead of the quantum-well structure above, it is possible to adopt the quantum-well structure of strained-layers comprising first and second barrier layers which are of In.sub.1-x Al.sub.x As (0.48<x.ltoreq.1) and have a thickness of 0.5 to 10.0 nm.