Yao, Japan

Toshimasa Matsuoka



Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 354(Granted Patents)


Location History:

  • Osaka, JP (2004)
  • Yao, JP (1995 - 2005)

Company Filing History:


Years Active: 1995-2005

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11 patents (USPTO):Explore Patents

Title: Toshimasa Matsuoka: Innovator in Semiconductor Technology

Introduction

Toshimasa Matsuoka is a prominent inventor based in Yao, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Matsuoka's latest patents include a semiconductor device and a method for fabricating the same. This semiconductor device features a semiconductor substrate with a deep well region of a first conductivity type, along with multiple shallow well regions of a second conductivity type. The design includes a source region and a drain region of the first conductivity type, a channel region, a gate insulating film, and a gate electrode that is electrically connected to the shallow well regions.

Another notable patent is for surface-channel metal-oxide semiconductor transistors and their complementary field-effect transistors. This invention comprises a gate electrode formed on a semiconductor substrate with a gate dielectric film, along with source and drain regions that are self-aligned with the gate electrode.

Career Highlights

Matsuoka is currently associated with Sharp Kabushiki Kaisha Corporation, where he continues to innovate in semiconductor technology. His expertise and inventions have positioned him as a key figure in the industry.

Collaborations

Some of his notable coworkers include Hiroshi Iwata and Masayuki Nakano, who have collaborated with him on various projects.

Conclusion

Toshimasa Matsuoka's contributions to semiconductor technology through his patents and work at Sharp Kabushiki Kaisha Corporation highlight his importance as an inventor in this field. His innovations continue to shape the future of semiconductor devices.

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