Sharp Kabushiki Kaisha Corporation

Toshimasa Matsuoka

Hiroshi Iwata

Masayuki Nakano

Seizou Kakimoto

Shigeki Hayashida

Seizo Kakimoto

Satoshi Morishita

Takashi Fukushima

Hiroshi Kotaki

A semiconductor device of the present invention includes: a semiconductor substrate; a deep well region of a first conductivity type, formed in the semiconductor substrate; a plurality of shallow well regions of a second conductivity type, formed in the deep well region; a source region and a drain region of the first conductivity type, respectively formed in the plurality of shallow well regions; a channel region formed between the source region and the drain region; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film, wherein the gate electrode is electrically connected to a corresponding one of the shallow well regions, and the shallow well region is electrically separated from the adjacent shallow well region.

Semiconductor device and method for fabricating the same

A surface-channel MOS transistor comprising; a gate electrode formed on a semiconductor substrate with a gate dielectric film therebetween and source/drain regions formed in the semiconductor substrate wherein the gate electrode is formed at least a polysilicon layer of a thickness of 100 to 200 nm uniformly doped with an impurity and the source/drain regions contains the same impurity in self-alignment with the gate electrode.

Surface-channel metal-oxide semiconductor transistors, their complementary field-effect transistors and method of producing the same

A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.

Semiconductor device having junction depths for reducing short channel effect

A semiconductor device which materializes dynamic threshold operation, on the assumption of the application of a bulk semiconductor substrate. The semiconductor substrate has a first conductivity type well region (,), a source region (,) and a drain region (,) of second conductivity type are made in the vicinity of the surface of the first conductivity type of well region (,), a channel region (,) is provided between these regions (,and,), a gate insulating film (,) and a gate electrode (,) are stacked in order on the channel region (,), and the gate electrode (,) is connected to the well region (,) through the contact hole (not shown in the figure) of the gate insulating film (,). In this transistor, as compared with a conventional SOI substrate, the resistance of the well region (,) can be lowered to about one-tenth.

Semiconductor device

In accordance with the development of the fineness of MOSFETs, a gate insulating film and a capacitor insulating film are required to have a smaller thickness and a higher film quality. Accordingly, the present invention is intended to provide a method for forming a high-quality insulating film while preventing hydrogen atoms which cause a leak current and an electron trap from entering the insulating film. The present method uses a gas of molecules containing at least nitrogen, the gas is a compound which includes no oxygen atom and has no bond of a nitrogen atom and a hydrogen atom (N--H) and generates monoatomic nitrogen when the gas dissociates.

Method of forming insulating film with few hydrogen atom inclusions

Fabrication method for a semiconductor device

In a method of forming gate dielectric films, a surface of a Si wafer is first cleaned in an inert gas ambient into a clean state having no naturally oxidized films. Then, after replacing the inert gas ambient with an oxidizing gas containing no nitrogen without exposing the wafer to air, the wafer is heated in the replaced ambient to form a first silicon oxide film on the silicon surface. Then, the ambient is again replaced with an oxidizing gas containing nitrogen, and the wafer is heated in the replaced ambient to form a first oxynitride film between the first silicon oxide film and the silicon. Thereafter, re-oxidation of the wafer is performed in an ambient of oxidizing gas containing no nitrogen to form a second silicon oxide film between the first oxynitride film and the silicon.

Method of forming gate dielectric films for MOSFETs without generation

A method of forming semiconductor devices comprising the steps of forming, by restriction in the increased number of steps by a process close to the normal process, a field effect transistor having a local shallow source/drain diffusion layer on both the sides of a gate electrode for self-matching operation and without etching damages, wherein impurities are ion-implanted onto the semiconductor side wall and onto the substrate surface of both the sides, and thermal treatment operation is effected so as to form the local shallow source/drain diffusing layers by the diffusion for activating the impurities of the deep shallow source drain diffusing layers, thereby to render to be capable of restraining a short channel effect and reducing the parasitic resistance of the semiconductor devices.

Growing community of inventors

Yao, Japan

Toshimasa Matsuoka