The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Jul. 07, 1999
Hiroshi Iwata, Nara-ken, JP;
Seizou Kakimoto, Nara-ken, JP;
Masayuki Nakano, Tenri, JP;
Toshimasa Matsuoka, Yao, JP;
Sharp Kabushiki Kaisha, , JP;
Abstract
A semiconductor device which materializes dynamic threshold operation, on the assumption of the application of a bulk semiconductor substrate. The semiconductor substrate has a first conductivity type well region (,), a source region (,) and a drain region (,) of second conductivity type are made in the vicinity of the surface of the first conductivity type of well region (,), a channel region (,) is provided between these regions (,and,), a gate insulating film (,) and a gate electrode (,) are stacked in order on the channel region (,), and the gate electrode (,) is connected to the well region (,) through the contact hole (not shown in the figure) of the gate insulating film (,). In this transistor, as compared with a conventional SOI substrate, the resistance of the well region (,) can be lowered to about one-tenth.