The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
May. 15, 2003
Hiroshi Iwata, Ikoma-gun, JP;
Seizou Kakimoto, Shiki-gun, JP;
Masayuki Nakano, Tenri, JP;
Toshimasa Matsuoka, Yao, JP;
Hiroshi Iwata, Ikoma-gun, JP;
Seizou Kakimoto, Shiki-gun, JP;
Masayuki Nakano, Tenri, JP;
Toshimasa Matsuoka, Yao, JP;
Sharp Kabushiki Kaisha, Abeno-ku, JP;
Abstract
A semiconductor device of the present invention includes: a semiconductor substrate; a deep well region of a first conductivity type, formed in the semiconductor substrate; a plurality of shallow well regions of a second conductivity type, formed in the deep well region; a source region and a drain region of the first conductivity type, respectively formed in the plurality of shallow well regions; a channel region formed between the source region and the drain region; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film, wherein the gate electrode is electrically connected to a corresponding one of the shallow well regions, and the shallow well region is electrically separated from the adjacent shallow well region.