The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
Jul. 07, 1997
Toshimasa Matsuoka, Yao, JP;
Masayuki Nakano, Tenri, JP;
Hiroshi Iwata, Ikoma-gun, JP;
Seizo Kakimoto, Shiki-gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a method of forming gate dielectric films, a surface of a Si wafer is first cleaned in an inert gas ambient into a clean state having no naturally oxidized films. Then, after replacing the inert gas ambient with an oxidizing gas containing no nitrogen without exposing the wafer to air, the wafer is heated in the replaced ambient to form a first silicon oxide film on the silicon surface. Then, the ambient is again replaced with an oxidizing gas containing nitrogen, and the wafer is heated in the replaced ambient to form a first oxynitride film between the first silicon oxide film and the silicon. Thereafter, re-oxidation of the wafer is performed in an ambient of oxidizing gas containing no nitrogen to form a second silicon oxide film between the first oxynitride film and the silicon.