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For the Inventor, By the Inventor

Tokyo, Japan

Toshikazu Matsui

This inventor holds 32 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Renesas Electronics Corporation, Renesas Technology Corp., Kabushiki Kaisha Toshiba. Active years: 1986-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshikazu Matsui. Retrieved from https://idiyas.com/inventor/toshikazu-matsui

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 90.6

Average Co-Inventor Count = 5.7

ph-index = 10

Forward Citations = 368(Granted Patents)


Location History:

  • Kobe, JP (1994 - 1997)
  • Kodaira, JP (2007 - 2013)
  • Kanagawa, JP (2013)
  • Tokyo, JP (1986 - 2021)

Company Filing History:

goldMedal19 out of 7,651 
 
Renesas Electronics Corporation
 patents
silverMedal7 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal5 out of 53,250 
 
Kabushiki Kaisha Toshiba
 patents
4. 1 out of 2,916 
 
Tokyo Shibaura Denki Kabushiki Kaisha
 patents

Years Active: 1986-2021

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Areas of Expertise:
Semiconductor Device
Non-Volatile Memory
Memory Cells
Manufacturing Method
Trench-Isolated
Gate Electrodes
MISFET
Holographic Display
Color Image Printing
Picture Printing
Electrostatographic
32 patents (USPTO):Explore Patents
1. 10910394 - Semiconductor device (2021-02-02),
2. 10692878 - Semiconductor device (2020-06-23),
3. 10396089 - Semiconductor device (2019-08-27),
4. 10141324 - Semiconductor device (2018-11-27),
5. 9755012 - Semiconductor device and a method of manufacturing the same (2017-09-05),
6. 9640546 - Semiconductor device (2017-05-02),
7. 9461105 - Semiconductor device and a method of manufacturing the same (2016-10-04),
8. 8975678 - Semiconductor device and a method of manufacturing the same (2015-03-10),
9. 8963226 - Semiconductor device with gate electrodes (2015-02-24),
10. 8530958 - Semiconductor device having split gate type, non-volatile memory cells and a method of manufacturing the same (2013-09-10),
11. 8513808 - Semiconductor device having trench-isolated element formation region (2013-08-20),
12. 8431978 - Semiconductor device and a method of manufacturing the same (2013-04-30),
13. 8390048 - Method of manufacturing a nonvolatile semiconductor memory device, and a nonvolatile semiconductor memory device (2013-03-05),
14. 8319265 - Semiconductor device with improved common source arrangement for adjacent non-volatile memory cells (2012-11-27),
15. 8258561 - Semiconductor device and a method of manufacturing the same (2012-09-04),

Title: Toshikazu Matsui - Innovative Inventor from Tokyo

Introduction: Toshikazu Matsui is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Matsui holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Matsui has worked with leading research institutions and tech companies in Japan, spearheading projects that have led to significant advancements in automation and sustainable energy solutions.

Collaborations: Matsui has collaborated with top universities and multinational corporations to develop cutting-edge technologies that have revolutionized industries, demonstrating his ability to work effectively in diverse teams to achieve common goals.

Conclusion: Toshikazu Matsui's dedication to innovation and his passion for creating solutions that address global challenges have solidified his reputation as a visionary inventor in the tech community.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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