The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Aug. 16, 2012
Yoshiyuki Kawashima, Tokyo, JP;
Koichi Toba, Tokyo, JP;
Yasushi Ishii, Tokyo, JP;
Toshikazu Matsui, Tokyo, JP;
Takashi Hashimoto, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
Koichi Toba, Tokyo, JP;
Yasushi Ishii, Tokyo, JP;
Toshikazu Matsui, Tokyo, JP;
Takashi Hashimoto, Tokyo, JP;
Renesas Electronics Corporation, Kawaswaki-shi, JP;
Abstract
In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.