The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Mar. 05, 2010
Koichi Toba, Tokyo, JP;
Yasushi Ishii, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
Satoru Machida, Tokyo, JP;
Munekatsu Nakagawa, Tokyo, JP;
Kentaro Saito, Tokyo, JP;
Toshikazu Matsui, Tokyo, JP;
Takashi Hashimoto, Tokyo, JP;
Kosuke Okuyama, Tokyo, JP;
Koichi Toba, Tokyo, JP;
Yasushi Ishii, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
Satoru Machida, Tokyo, JP;
Munekatsu Nakagawa, Tokyo, JP;
Kentaro Saito, Tokyo, JP;
Toshikazu Matsui, Tokyo, JP;
Takashi Hashimoto, Tokyo, JP;
Kosuke Okuyama, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.