Company Filing History:
Years Active: 2005-2010
Title: Toshifumi Mori: Innovator in Semiconductor Technology
Introduction
Toshifumi Mori is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Mori's latest patents include a semiconductor device and fabrication process that features a device isolation region of STI structure formed on a silicon substrate. This innovation defines a device region with a device isolation trench and an HF-resistant film. Another notable patent involves a method for fabricating a complementary semiconductor device with a strained channel p-transistor. This method incorporates compression stress applying portions of SiGe film in the source and drain regions, which helps balance the operation speed of p-MOS and n-MOS transistors, ultimately enhancing the overall performance of the semiconductor device.
Career Highlights
Throughout his career, Toshifumi Mori has worked with leading companies in the technology sector, including Fujitsu Corporation and Fujitsu Microelectronics Limited. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Mori has collaborated with notable professionals in the field, including Young Suk Kim and Ryou Nakamura. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Toshifumi Mori is a key figure in semiconductor innovation, with a focus on improving device performance through his patented technologies. His contributions continue to influence the industry and pave the way for future advancements.