Fujitsu Corporation

Fujitsu Microelectronics Limited

Toshifumi Mori

Hiroyuki Ohta

Young Suk Kim

Ryou Nakamura

Takashi Watanabe

Takashi Saiki

Takayuki Ohba

Katsuaki Ookoshi

Kengo Inoue

Masayuki Furuhashi

There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.

Semiconductor device and fabrication process thereof

Compression stress applying portionsof SiGe film are formed in the source/drain regions of the p-MOSA region. Then, impurities are implanted in the p-MOS regionand the n-MOS regionto form shallow junction regionsand deep junction regions. The impurity in the shallow junction regionsis prevented from being diffused immediately below the gate insulation filmby the thermal processing in forming the SiGe film, the short channel effect is prevented, and the hole mobility of the channel region of the p-MOS transistor. The operation speed of the p-MOS transistoris balanced with that of the n-MOS transistor, whereby the operation speed of the complementary semiconductor devicecan be increased. The semiconductor device fabricating method can increase and balance the operation speed of a p-transistor with that of an n-transistor.

Method of fabricating a complementary semiconductor device having a strained channel p-transistor

The semiconductor device fabrication method comprises the step of forming gate electrodeon a semiconductor substratewith a gate insulation filmformed therebetween; the step of implanting dopants in the semiconductor substratewith the gate electrodeas the mask to form dopant diffused regions; the step of forming a silicon oxide filmon the semiconductor substrate, covering the gate electrodes; anisotropically etching the silicon oxide filmto form sidewall spacersincluding the silicon oxide filmon the side walls of the gate electrode. In the step of forming a silicon oxide film, the silicon oxide filmis formed by thermal CVD at a 500&#x2013;580&#xb0; C. film forming temperature, using bis(tertiary-butylamino)silane and oxygen as raw materials. Silicon oxide filmis formed at a relatively low film forming temperature, whereby the diffusion of the dopant in the doapnt diffused regionsforming the shallow region of the extension source/drain structure can be suppressed.

Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN

A semiconductor device manufacture method has the steps of: (a) forming a polishing stopper layer over a semiconductor substrate; (b) etching the semiconductor substrate to form a trench; (c) forming a first liner insulating layer of silicon oxide over the surface of the trench; (d) forming a second liner insulating layer of silicon nitride over the first liner insulating layer, the second liner insulating layer having a thickness of at least 20 nm or at most 8 nm; (e1) depositing a third liner insulating layer of silicon oxide over the second liner insulating layer by plasma CVD at a first bias; and (e2) depositing an isolation layer of silicon oxide by plasma CVD at a second bias higher than the first bias, the isolation layer burying a recess defined by the third liner insulating layer.

Manufacture of semiconductor device having STI and semiconductor device manufactured

A method for fabricating a semiconductor device comprises the steps of: forming a polysilicon filmon a silicon substrate; removing a natural oxide filmon the surface of the polysilicon film; forming a homogeneous chemical oxide filmon the surface of the polsysilicon filmhaving the natural oxide filmremoved; forming a silicon oxide filmto be used as a hard mask on the polysilicon filmwith the chemical oxide filmformed on; and etching the polysilicon filmwith the silicon oxide filmas a mask to form a gate electrodeof the polysilicon film

Method for fabricating semiconductor device

A gate electrode is formed over a partial surface area of a semiconductor substrate, with a gate insulating film being interposed therebetween. A first semiconductor film is formed over the semiconductor substrate on both sides of the gate electrode, the first semiconductor film being spaced apart from the gate electrode. An impurity diffusion region is formed in each of the first semiconductor films. An extension region is formed in the surface layer of the semiconductor substrate on both sides of the gate electrode. The extension region is doped with impurities of the same conductivity type as the impurity diffusion region and being connected to a corresponding one of the impurity diffusion regions. Sidewall spacers are formed on the sidewalls of the gate electrode, the sidewall spacers extending beyond edges of the first semiconductor films on the gate electrode side and covering partial surfaces of the first semiconductor films.

Growing community of inventors

Kawasaki, Japan

Toshifumi Mori