The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Aug. 25, 2005
Applicants:
Toshifumi Mori, Kawasaki, JP;
Katsuaki Ookoshi, Kawasaki, JP;
Takashi Watanabe, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Inventors:
Toshifumi Mori, Kawasaki, JP;
Katsuaki Ookoshi, Kawasaki, JP;
Takashi Watanabe, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Assignee:
Fujitsu Microelectronics Limited, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is provided a semiconductor device having a device isolation region of STI structure formed on a silicon substrate so as to define a device region, wherein the device isolation region comprises a device isolation trench formed in the silicon substrate, and a device isolation insulation film filling the device isolation trench. At least a surface part of the device isolation insulation film is formed of an HF-resistant film.