The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Apr. 05, 2005
Young Suk Kim, Kawasaki, JP;
Toshifumi Mori, Kawasaki, JP;
Young Suk Kim, Kawasaki, JP;
Toshifumi Mori, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
Compression stress applying portionsof SiGe film are formed in the source/drain regions of the p-MOSA region. Then, impurities are implanted in the p-MOS regionand the n-MOS regionto form shallow junction regionsand deep junction regions. The impurity in the shallow junction regionsis prevented from being diffused immediately below the gate insulation filmby the thermal processing in forming the SiGe film, the short channel effect is prevented, and the hole mobility of the channel region of the p-MOS transistor. The operation speed of the p-MOS transistoris balanced with that of the n-MOS transistor, whereby the operation speed of the complementary semiconductor devicecan be increased. The semiconductor device fabricating method can increase and balance the operation speed of a p-transistor with that of an n-transistor.