The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Oct. 28, 2003
Applicant:
Toshifumi Mori, Kawasaki, JP;
Inventor:
Toshifumi Mori, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device comprises the steps of: forming a polysilicon filmon a silicon substrate; removing a natural oxide filmon the surface of the polysilicon film; forming a homogeneous chemical oxide filmon the surface of the polsysilicon filmhaving the natural oxide filmremoved; forming a silicon oxide filmto be used as a hard mask on the polysilicon filmwith the chemical oxide filmformed on; and etching the polysilicon filmwith the silicon oxide filmas a mask to form a gate electrodeof the polysilicon film