Location History:
- Tokyo, JP (2009 - 2014)
- Bunkyo, JP (2017)
Company Filing History:
Years Active: 2009-2017
Title: Toshifumi Irisawa: Innovator in Semiconductor Technology
Introduction
Toshifumi Irisawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.
Latest Patents
Irisawa's latest patents include a semiconductor memory device that features a memory cell comprising an oxide semiconductor layer, a gate electrode, and a charge accumulation layer. This innovative design utilizes a stacked structure of n-type and p-type oxide semiconductor layers. Another notable patent is for a semiconductor device that includes a first region with an oxide semiconductor containing indium, gallium, and zinc, along with additional regions that enhance its performance through higher indium concentration and the inclusion of various metal elements.
Career Highlights
Throughout his career, Toshifumi Irisawa has worked with notable companies such as Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His experience in these organizations has allowed him to develop cutting-edge technologies that have had a lasting impact on the semiconductor industry.
Collaborations
Irisawa has collaborated with esteemed colleagues, including Tsutomu Tezuka and Shinichi Takagi. These partnerships have fostered innovation and have contributed to the successful development of various semiconductor technologies.
Conclusion
Toshifumi Irisawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.