The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
May. 22, 2006
Toshifumi Irisawa, Tokyo, JP;
Toshinori Numata, Kamakura, JP;
Tsutomu Tezuka, Yokohama, JP;
Naoharu Sugiyama, Yokohama, JP;
Shinichi Takagi, Tsukuba, JP;
Toshifumi Irisawa, Tokyo, JP;
Toshinori Numata, Kamakura, JP;
Tsutomu Tezuka, Yokohama, JP;
Naoharu Sugiyama, Yokohama, JP;
Shinichi Takagi, Tsukuba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes an n-channel MIS transistor and a p-channel MIS transistor on a semiconductor layer formed on an insulating layer, in which the channel of the n-channel MIS transistor is formed of a strained Si layer having biaxial tensile strain and the channel of the p-channel MIS transistor is formed of a strained SiGe layer having uniaxial compression strain in the channel length direction.