The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jan. 20, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kensuke Ota, Kawasaki, JP;

Toshifumi Irisawa, Bunkyo, JP;

Masumi Saitoh, Yokkaichi, JP;

Kiwamu Sakuma, Yokkaichi, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 21/32134 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn), a second region and a third region between which the first region is disposed, at least one of the second region and the third region having a higher indium (In) concentration than the first region and containing at least one metal element from the group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb), and tin (Sn), an electrode; and an insulating layer disposed between the first region and the electrode.


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