The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Feb. 13, 2007
Toshifumi Irisawa, Tokyo, JP;
Toshinori Numata, Kamakura, JP;
Shinichi Takagi, Tsukuba, JP;
Naoharu Sugiyama, Yokohama, JP;
Toshifumi Irisawa, Tokyo, JP;
Toshinori Numata, Kamakura, JP;
Shinichi Takagi, Tsukuba, JP;
Naoharu Sugiyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a semiconductor device including a multi-gate MIS transistor having a channel on a plurality of surfaces, a gate electrode is formed on a gate insulating film on side surfaces of an island-like semiconductor layer formed along a given direction on an insulating film, and source/drain electrodes are formed in contact with the semiconductor layer. The semiconductor layer has a plurality of side surfaces along the given direction. All angles formed by adjacent side surfaces are larger than 90°. A section perpendicular to the given direction is vertically and horizontally symmetrical.