Higashimurayama, Japan

Toshiaki Nishimoto


Average Co-Inventor Count = 4.5

ph-index = 11

Forward Citations = 361(Granted Patents)


Location History:

  • Tachikawa, JP (1998 - 2002)
  • Tama, JP (1990 - 2008)
  • Higashimurayama, JP (2002 - 2010)

Company Filing History:


Years Active: 1990-2010

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32 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Toshiaki Nishimoto in Semiconductor Technology**

Introduction

Toshiaki Nishimoto, a prominent inventor hailing from Higashimurayama, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 32 patents, his work reflects a commitment to innovation and excellence in the industry. His latest contributions focus on enhancing the reliability and performance of semiconductor devices, catering to the evolving demands of modern technology.

Latest Patents

Among his latest innovations, Toshiaki Nishimoto has developed a non-volatile semiconductor memory and a method of making the same, alongside a semiconductor device and its corresponding manufacturing method. These advancements involve a sophisticated design of memory cells that ensure device reliability, particularly in fine regions. His semiconductor device integrates features such as a gate insulating film, floating gate electrode, interlayer insulating film, control gate electrode, and source and drain regions of the second conduction type arranged in a matrix. The inclusion of a shallow isolation structure is crucial for isolating the memory cells, effectively preventing the lowering of isolation withstand voltage in fine regions, and minimizing threshold level variation of selective transistors. This innovation also improves the disturb resistance of memory cells when organized in a memory mat divided by selective transistors, thus enhancing overall device performance.

Career Highlights

Toshiaki Nishimoto's career features notable tenures with leading companies such as Hitachi, Ltd. and Renesas Technology Corporation. His experience in these dynamic organizations has substantially influenced his journey as an inventor. Through his roles, he has been at the forefront of groundbreaking developments in semiconductor technology, contributing to the advancement of high-performance devices.

Collaborations

Throughout his career, Toshiaki has collaborated with esteemed colleagues, including Hitoshi Kume and Kazuhiro Komori. These partnerships have fostered an environment of shared knowledge and creativity, leading to innovative solutions in semiconductor research and development.

Conclusion

In summary, Toshiaki Nishimoto has established himself as a key figure in semiconductor innovation through his extensive patent portfolio and collaboration with leading technology companies. His latest inventions not only address current industry challenges but also pave the way for the future of semiconductor devices, ensuring improved reliability, performance, and efficiency in an ever-evolving technological landscape.

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