Annaka, Japan

Toru Takahashi


Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Fukushima, JP (1989)
  • Gunma-ken, JP (2002)
  • Annaka, JP (2013 - 2022)

Company Filing History:


Years Active: 1989-2025

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6 patents (USPTO):Explore Patents

Title: Toru Takahashi: Innovator in Silicon Carbide Technology

Introduction

Toru Takahashi is a prominent inventor based in Annaka, Japan. He has made significant contributions to the field of silicon carbide technology, holding a total of 6 patents. His innovative methods have advanced the manufacturing and evaluation processes of silicon carbide single crystal wafers.

Latest Patents

Takahashi's latest patents include a method for evaluating crystal defects in silicon carbide single crystal wafers. This method involves etching the wafer with melted KOH to create etch pits, followed by automatic microscopic imaging to assess the presence of defects. Another notable patent is a method for manufacturing silicon carbide single crystals, which focuses on adjusting the position of a hole in the growth container to reduce crystallinity degradation.

Career Highlights

Takahashi works at Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work has been instrumental in enhancing the quality and efficiency of silicon carbide crystal production.

Collaborations

Takahashi has collaborated with notable colleagues such as Hitoshi Ikeda and Yuichi Matsumoto, contributing to various advancements in their field.

Conclusion

Toru Takahashi's innovative work in silicon carbide technology has positioned him as a key figure in the industry. His patents reflect a commitment to improving manufacturing processes and evaluating crystal quality.

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