The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Apr. 22, 1999
Applicant:
Inventors:
Toru Takahashi, Gunma-ken, JP;
Susumu Higuchi, Gunma-ken, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ; H01L 3/112 ; H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 2/715 ; H01L 3/112 ; H01L 3/300 ;
Abstract
An epitaxial wafer comprises epitaxial layers formed on a main surface of a compound semiconductor single crystal substrate , wherein the epitaxial layer on the main surface is exposed in a back surface of the compound semiconductor single crystal substrate , and an exposed portion of the epitaxial layer has a carrier concentration of 1×10 cm to 2×10 cm . The epitaxial wafer provides for an ultra thin type light emitting diode where generation of ohmic electrode failure is suppressed.