The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1989
Filed:
Apr. 29, 1987
Applicant:
Inventor:
Toru Takahashi, Fukushima, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566181 ; 1566202 ; 156607 ; 156605 ; 156D / ;
Abstract
The invention provides a method of high productivity for the preparation of a substantially dislocation-free single crystal of a compound semiconductor such as gallium arsenide by the liquid-encapsulated Czochralski method. The improvement provided by the invention comprises admixing the melt in the crucible with an additive having an equilibrium segregation coefficient K.sub.O smaller than 1.0, which is indium in the preparation of gallium arsenide single crystals, in a concentration of at least 1.0.times.10.sup.21 atoms/cm.sup.3 of the melt and rotating the crucible at an unusually high velocity of at least 40 rpm.